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See Technical Specifications

FDMS86150 +BOM

Within the PowerTrench® MOSFET collection

Manufacturer:

onsemi
Mfr.Part #:

FDMS86150
Datasheet:

FDMS86150 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMS86150

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FDMS86150 General Description

The groundbreaking FDMS86150 N-Channel MOSFET stands as a testament to advanced technology and precision engineering. Utilizing the innovative PowerTrench^® process, this MOSFET has been meticulously crafted to reduce on-state resistance while still delivering exceptional switching capabilities

Key Features

Ultra-High Current Handling
Low Noise Operation for Sensitive Systems
Excellent Thermal Conductivity for Cooling Efficiency
High-Power Density for Compact Designs

Application

Portable Power Solution
Innovative Supply System
Modern Energy Provider

Specifications

Source Content uid	FDMS86150	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	49 Weeks
Avalanche Energy Rating (Eas)	726 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	16 A	Drain-source On Resistance-Max	0.00485 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-N5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	156 W
Pulsed Drain Current-Max (IDM)	300 A	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON