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See Technical Specifications

FDMS86182 +BOM

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 78A, 7.2mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMS86182
Datasheet:

FDMS86182 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMS86182

Email: [email protected]

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Tel: +852 95804164

FDMS86182 General Description

The FDMS86182 is a top-of-the-line N-Channel MV MOFSET that is crafted using the state-of-the-art PowerTrench^® process, which includes Shielded Gate technology. This cutting-edge process is designed to reduce on-state resistance while still delivering exceptional switching performance and featuring the best in class soft body diode. The result is a MOSFET that offers superior efficiency and reliability, making it an ideal choice for a wide range of power management applications

Key Features

Enhanced Isolation Capability
Superior Surge Protection
Advanced Overvoltage Prevention
Precise Current Limiting
Improved Thermal Management

Application

Useful in various situations.
Convenient and effective.
Essential for daily use.

Specifications

Source Content uid	FDMS86182	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	52 Weeks
Date Of Intro	2017-02-03	Avalanche Energy Rating (Eas)	216 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	78 A
Drain-source On Resistance-Max	0.0072 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	25 pF	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	83 W	Pulsed Drain Current-Max (IDM)	364 A
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	43 ns
Turn-on Time-Max (ton)	34 ns