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FDMS86201 +BOM

N-Channel Shielded Gate PowerTrench® MOSFET 120V, 49A, 11.5mΩ

FDMS86201 General Description

Introducing the FDMS86201, a state-of-the-art N-Channel MOSFET crafted using the revolutionary Power Trench® process. This innovative technology is meticulously engineered to minimize on-state resistance without compromising on switching performance. The FDMS86201 stands out as a top choice for demanding applications where power efficiency and reliability are paramount

Key Features

  • Robust Package Design for High Reliability
  • Advanced Silicon and Package Combination
  • Low On-Resistance and High Efficiency Technology
  • High Current Handling with Fast Switching Speed
  • Ultra Low Input Capacitance for Minimized EMI
  • High Voltage Tolerant with Immunity to Electrostatic Discharge

Application

  • Great product for all needs.
  • Perfect for a variety of tasks.
  • Versatile and reliable choice.

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 120 V Id - Continuous Drain Current 65 A
Rds On - Drain-Source Resistance 9.6 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 32 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 104 W Channel Mode Enhancement
Tradename PowerTrench Series FDMS86201
Configuration Single Fall Time 7.1 ns
Forward Transconductance - Min 39 S Height 1.1 mm
Length 6 mm Product Type MOSFET
Rise Time 7.7 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type N-Channel Power Trench MOSFET Typical Turn-Off Delay Time 27 ns
Typical Turn-On Delay Time 13 ns Width 5 mm
Unit Weight 0.002402 oz

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