This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDMS86252 +BOM

FDMS86252 PowerTrench MOSFET

Manufacturer:

onsemi
Mfr.Part #:

FDMS86252
Datasheet:

FDMS86252 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMS86252

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMS86252 General Description

The FDMS86252 is a high-performance N-channel MOSFET designed for power applications. With a continuous drain current of 16A and a drain-source voltage of 150V, this transistor offers reliable and efficient performance in a variety of circuit designs. Its low on-resistance of 0.0439ohm minimizes power losses, making it an ideal choice for high-current applications

Key Features

Ergonomic Design for Easy Handling
Low Input Capacitance Technology
Max C_iss = 10pF at V_GS = 5V, I_D = 3.8A
Thermal Feedback Control for Stable Operation
MSL1 Robust Package Design for High Reliability
High-Performance Power Switching Application

Application

Great for all occasions.
Perfect for everyday use.
Suitable for any setting.

Specifications

Source Content uid	FDMS86252	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	61 Weeks
Avalanche Energy Rating (Eas)	50 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	4.6 A	Drain-source On Resistance-Max	0.051 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	69 W
Pulsed Drain Current-Max (IDM)	20 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON