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See Technical Specifications

FDMS86300DC +BOM

0V voltage rating with high current capacity

Manufacturer:

onsemi
Mfr.Part #:

FDMS86300DC
Datasheet:

FDMS86300DC Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMS86300DC

FDMS86300DC General Description

The FDMS86300DC sets a new standard for N-Channel MOSFETs with its innovative Power Trench technology and Dual Cool™ package. By leveraging these advancements, this MOSFET achieves unmatched performance levels with the lowest rDS(on) in its class. Its superior thermal resistance properties ensure that heat is efficiently managed, allowing for sustained high performance and reliability. Whether used in industrial, automotive, or consumer electronics applications, the FDMS86300DC delivers exceptional efficiency and functionality

Key Features

Advanced Power Packaging
Pulse-Width Modulation Ready
High-Speed Switching Capability
Fully Compliant to Industry Standards
Silicon-Based Semiconductor Excellence
Optimized Thermal Performance Guaranteed

Application

Sleek and Modern Design
Intelligent Power Management
Safety Certification Approved

Specifications

Source Content uid	FDMS86300DC	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	65 Weeks
Additional Feature	ULTRA LOW RESISTANCE	Avalanche Energy Rating (Eas)	240 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V	Drain Current-Max (ID)	24 A
Drain-source On Resistance-Max	0.0031 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	MO-240AA	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	125 W	Pulsed Drain Current-Max (IDM)	260 A
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON