This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

FDMS86500L +BOM

N-Channel PowerTrench® MOSFET 60V, 158A, 2.5mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDMS86500L
Datasheet:

FDMS86500L Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDMS86500L

Email: [email protected]

Skype: live:.cid.ab6b29428937b76

Tel: +852 95804164

FDMS86500L General Description

In the realm of power management, the FDMS86500L N-Channel MOSFET is a standout performer. Engineered to enhance efficiency and minimize switch node ringing in DC/DC converters, this MOSFET offers a winning combination of low gate charge, low R_DS(on), fast switching speed, and exceptional body diode reverse recovery performance. When it comes to powering demanding applications, the FDMS86500L is a reliable and efficient choice

Key Features

High-speed switching performance
Fast recovery time and soft turn-off
Low loss and high efficiency operation
Advanced thermal management system
Rugged design for harsh environments
Low inductance package for reduced ringing

Application

High Performance Switching Regulator
Advanced Power Control
Efficient Power Management

Specifications

Source Content uid	FDMS86500L	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	17 Weeks, 3 Days
Avalanche Energy Rating (Eas)	240 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	25 A	Drain-source On Resistance-Max	0.0025 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	104 W
Pulsed Drain Current-Max (IDM)	180 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON