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See Technical Specifications

FDN327N +BOM

High-power, high-speed N-channel MOSFET for switching applications

Manufacturer:

Onsemi
Mfr.Part #:

FDN327N
Datasheet:

FDN327N Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDN327N

FDN327N General Description

The FDN327N MOSFET transistor is a reliable and efficient component suitable for diverse electronic circuit designs. With its N-channel polarity, it can manage a continuous drain current (Id) of 2A and a drain-source voltage (Vds) of 20V. The on-resistance (Rds(on)) of 0.04ohm, along with a Rds(on) test voltage (Vgs) of 4.5V, provides low power dissipation and high efficiency. Moreover, its threshold voltage (Vgs) of 700mV enables accurate and controlled switching in electronic circuits

Key Features

R_DS(ON) = 40 mΩ @ V_GS = 3.2 V
High reliability and robustness
Fast response time
Low distortion and noise
R_DS(ON) = 35 mΩ @ V_GS = 5.2 V
High immunity to radiation interference

Application

Compact Design
Versatile Functionality

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	2 A	Rds On - Drain-Source Resistance	40 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	400 mV
Qg - Gate Charge	6.3 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDN327N	Configuration	Single
Fall Time	6.5 ns	Forward Transconductance - Min	11 S
Height	1.12 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	6.5 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	14 ns
Typical Turn-On Delay Time	6 ns	Width	1.4 mm
Part # Aliases	FDN327N_NL	Unit Weight	0.001058 oz

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