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See Technical Specifications

FDN359AN +BOM

23 N-Channel MOSFET 30V 2.7A

Manufacturer:

onsemi
Mfr.Part #:

FDN359AN
Datasheet:

FDN359AN Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDN359AN

FDN359AN General Description

The FDN359AN N-Channel Logic Level MOSFET from Fairchild Semiconductor is specifically designed for low voltage and battery powered applications. Using the advanced PowerTrench process, this MOSFET delivers minimal on-state resistance and superior switching performance, making it an ideal choice for applications where low power loss and fast switching are crucial. From handheld devices to automotive systems, the FDN359AN offers reliable and efficient performance in a variety of low voltage settings

Key Features

High Speed, Low Power
Ultra Fast Switching Time
Compact, High Current Package

Application

Multiple input options
Portable and lightweight
User-friendly interface

Specifications

Source Content uid	FDN359AN	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Additional Feature	LOGIC LEVEL COMPATIBLE	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	2.7 A
Drain-source On Resistance-Max	0.046 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	0.5 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON