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See Technical Specifications

FDN5618P +BOM

Compact and reliable pin SuperSOT package for efficient desig

Manufacturer:

Onsemi
Mfr.Part #:

FDN5618P
Datasheet:

FDN5618P Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for FDN5618P

FDN5618P General Description

Product FDN5618P is a P-channel transistor with a single configuration, designed for a wide range of applications. With a continuous drain current (Id) of -1.25A and a drain-source voltage (Vds) of -60V, this transistor offers reliable performance. The ON resistance (Rds(on)) is 230mOhm, ensuring efficient power distribution. The gate-source voltage is 20V, facilitating smooth operation

Key Features

FDN56P has low on-resistance for efficient switching

Application

A must-have for multiple tasks.
Get the job done with ease.
Designed for various applications.

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	1.2 A	Rds On - Drain-Source Resistance	170 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	13.8 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	500 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDN5618P	Configuration	Single
Fall Time	8 ns	Forward Transconductance - Min	4.3 S
Height	1.12 mm	Length	2.9 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	8 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	16.5 ns
Typical Turn-On Delay Time	6.5 ns	Width	1.4 mm
Part # Aliases	FDN5618P_NL	Unit Weight	0.001058 oz