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See Technical Specifications

FDP12N60NZ +BOM

Power MOSFET, N-Channel, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220

Manufacturer:

onsemi
Mfr.Part #:

FDP12N60NZ
Datasheet:

FDP12N60NZ Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDP12N60NZ

FDP12N60NZ General Description

Product FDP12N60NZ is a member of the UniFET II MOSFET family, which boasts cutting-edge planar stripe and DMOS technology. With the smallest on-state resistance in its class, this advanced MOSFET series offers unmatched switching performance and higher avalanche energy strength. The inclusion of an internal gate-source ESD diode further enhances the durability of the UniFET II MOSFET, enabling it to withstand over 2kV HBM surge stress

Key Features

Safe operating temperature range
Low leakage current at high voltage
High speed switching capability
Compliant with RoHS directive

Application

Recommended for various applications
Perfect for LED TV use
Suitable for lighting fixtures

Specifications

Source Content uid	FDP12N60NZ	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	565 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	12 A
Drain-source On Resistance-Max	0.65 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	240 W	Pulsed Drain Current-Max (IDM)	48 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON