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FDPF10N60NZ +BOM

TO-220F packaged Power MOSFET designed for high power applications

Manufacturer:

Onsemi
Mfr.Part #:

FDPF10N60NZ
Datasheet:

FDPF10N60NZ Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
EDA/CAD Models:

Request Free CAD Models for FDPF10N60NZ

FDPF10N60NZ General Description

Product FDPF10N60NZ is part of the UniFET™ II MOSFET family, which utilizes advanced planar stripe and DMOS technology to deliver high voltage capabilities. With the smallest on-state resistance among planar MOSFETs, this product offers superior switching performance and increased avalanche energy strength. Additionally, the internal gate-source ESD diode allows the UniFET II MOSFET to withstand over 2kV HBM surge stress, ensuring reliability in demanding applications

Key Features

Fast switching speed
Low power consumption
High surge current

Application

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Specifications

Product Category	MOSFET	REACH	Details
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	10 A
Rds On - Drain-Source Resistance	640 mOhms	Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	5 V	Qg - Gate Charge	23 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	38 W	Channel Mode	Enhancement
Tradename	UniFET	Series	FDPF10N60NZ
Configuration	Single	Fall Time	50 nS
Forward Transconductance - Min	14 S	Height	16.07 mm
Length	10.36 mm	Product Type	MOSFET
Rise Time	50 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Width	4.9 mm	Unit Weight	0.068784 oz