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FDPF51N25 +BOM

250V N-Channel Trans MOSFET with 51A Current Handling in TO-220F Package

FDPF51N25 General Description

Whether you are designing a power supply for a flat panel TV or a high-performance electronic ballast, the FDPF51N25 provides the performance and reliability needed to meet the demands of modern power electronics. Its advanced design and construction make it a versatile and reliable choice for a wide range of power converter applications

Key Features

  • Crss (Typ. 20pF)
  • RDS(on) = 50mΩ (Typ.)@ VGS = 5V, ID = 12A
  • High-frequency operation support

Application

  • Excellent for AC-DC power
  • Ideal for various applications
  • Top choice for general use

Specifications

Product Category MOSFET REACH Details
Technology Si Mounting Style Through Hole
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 250 V Id - Continuous Drain Current 51 A
Rds On - Drain-Source Resistance 60 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 70 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 38 W Channel Mode Enhancement
Tradename UniFET Series FDPF51N25
Configuration Single Fall Time 130 ns
Forward Transconductance - Min 43 S Height 16.07 mm
Length 10.36 mm Product Type MOSFET
Rise Time 465 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 98 ns
Typical Turn-On Delay Time 62 ns Width 4.9 mm
Unit Weight 0.068784 oz

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