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FDS4935A +BOM

Channel PowerTrench MOSFET

FDS4935A General Description

The FDS4935A P-Channel MOSFET stands out as a top choice for power management applications thanks to its rugged gate design and advanced PowerTrench technology. With a wide range of gate drive voltage ratings, from 4.5V to 20V, this MOSFET offers versatility and reliability for a variety of power management needs. Its high power efficiency ensures consistent performance, making it an ideal solution for both professional and personal electronics projects

Key Features

  • Fast switching, low gate charge
  • High power density, high current
  • Low RDS(ON), high performance
  • Advanced trench technology, high reliability
  • Compact design, high power handling
  • Fast response, low noise operation

Application

  • Compact size
  • Overload protection
  • Easy installation

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 7 A Rds On - Drain-Source Resistance 23 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 21 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Tradename PowerTrench
Series FDS4935A Configuration Dual
Fall Time 25 ns Forward Transconductance - Min 19 S
Height 1.75 mm Length 4.9 mm
Product Type MOSFET Rise Time 10 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 2 P-Channel Type MOSFET
Typical Turn-Off Delay Time 48 ns Typical Turn-On Delay Time 13 ns
Width 3.9 mm Part # Aliases FDS4935A_NL
Unit Weight 0.006596 oz

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