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See Technical Specifications

FDS5680 +BOM

N-Channel PowerTrenchTM MOSFET, 60V, 8A, 20mΩ

Manufacturer:

onsemi
Mfr.Part #:

FDS5680
Datasheet:

FDS5680 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS5680

FDS5680 General Description

Designed for optimal efficiency, the FDS5680 N-Channel Logic Level MOSFET utilizes advanced PowerTrench technology to deliver superior on-state resistance reduction and fast switching speeds. A perfect fit for low voltage and battery-powered applications, this MOSFET excels in scenarios where minimizing power loss is critical. With its innovative design and top-notch performance, the FDS5680 sets a new standard for MOSFETs in the realm of modern electronics engineering

Key Features

Precision control over power delivery
Improved fault tolerance and detection
Enhanced safety and protection features
Simplified system integration and setup

Application

Advanced technology
Multiple applications
Cost-effective solution

Specifications

Source Content uid	FDS5680	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	8 A	Drain-source On Resistance-Max	0.02 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	100 pF
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2.5 W	Pulsed Drain Current-Max (IDM)	50 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	76 ns	Turn-on Time-Max (ton)	40 ns