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FDS6990AS +BOM

With a 30V voltage threshold and a formidable 7

FDS6990AS General Description

In summary, the FDS6990AS represents a significant advancement in synchronous rectification technology, offering improved efficiency, reliability, and simplicity in design. Its integrated MOSFET and Schottky diodes provide a compact and efficient solution for DC:DC power supplies, helping to streamline the development process and enhance overall system performance. Whether used in consumer electronics, industrial equipment, or automotive applications, the FDS6990AS is a versatile and dependable choice for demanding power supply requirements

Key Features

  • Low gate charge (5nC typical)
  • RDS(ON) = 15 mΩ @ VGS = 7V
  • High-speed switching capability
  • Safe operating area for high reliability
  • Trench technology for low RDS(ON)
  • Includes body diode with fast recovery time

Application

  • Dependable power solution
  • Optimal control capabilities
  • Space-saving design

Specifications

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 7.5 A Rds On - Drain-Source Resistance 17 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 14 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Tradename PowerTrench SyncFET
Series FDS6990AS Configuration Dual
Fall Time 5 ns, 8 ns Forward Transconductance - Min 29 S
Height 1.75 mm Length 4.9 mm
Product MOSFET Small Signal Product Type MOSFET
Rise Time 5 ns, 8 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 2 N-Channel
Type FET Typical Turn-Off Delay Time 24 ns, 14 ns
Typical Turn-On Delay Time 8 ns, 9 ns Width 3.9 mm
Part # Aliases FDS6990AS_NL Unit Weight 0.007408 oz

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