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N-Channel PowerTrench® MOSFET 30V, 8.5A, 23mΩ
SOIC-8Manufacturer:
Mfr.Part #:
FDS8884
Datasheet:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Models:
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Focused on improving the operational efficiency of DC/DC converters, the FDS8884 N-Channel MOSFET offers a tailored solution for both synchronous and conventional switching PWM controllers. With a keen emphasis on reducing gate charge, lowering RDS(on), and enhancing switching speed, this MOSFET is optimized to deliver optimal performance and reliability in various power management applications
Source Content uid | FDS8884 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 4 Weeks |
Additional Feature | FAST SWITCHING | Avalanche Energy Rating (Eas) | 32 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 8.5 A | Drain-source On Resistance-Max | 0.023 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 2.5 W | Pulsed Drain Current-Max (IDM) | 40 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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