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FDS8935 +BOM

Dual P-Channel -80V PowerTrench MOSFET

Manufacturer:

onsemi
Mfr.Part #:

FDS8935
Datasheet:

FDS8935 Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS8935

FDS8935 General Description

With a focus on delivering superior performance, the advanced PowerTrench® process employed in the production of FDS8935 ensures that this P-channel MOSFET stands out in terms of its low on-state resistance and robust switching performance. Customers can rely on the ruggedness of this product to meet their power management needs with precision and efficiency

Key Features

FDS8935 features fast switching with low noise and jitter
Suitable for demanding power management applications
Compact and reliable power semiconductor device
Powerful MOSFET solution for high-speed applications
Low RDS(ON) for efficient power conversion
High-reliability power MOSFET for demanding systems design

Application

Powerful Device
Versatile Components
Advanced Technology

Specifications

Source Content uid	FDS8935	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	compliant
ECCN Code	EAR99	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V	Drain Current-Max (ID)	2.1 A
Drain-source On Resistance-Max	0.183 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	36 pF	JESD-30 Code	R-PDSO-G8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	3.1 W	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON