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See Technical Specifications

FDS8960C +BOM

500-REEL Dual N & P-Channel PowerTrench MOSFET 35V

Manufacturer:

onsemi
Mfr.Part #:

FDS8960C
Datasheet:

FDS8960C Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDS8960C

FDS8960C General Description

The FDS8960C's compact DPAK package also plays a crucial role in its performance. The package provides excellent thermal management, ensuring that the transistor stays cool even under intense operating conditions

Key Features

The FDS89 series offers high reliability and a long lifespan
Its compact design makes it easy to integrate into various systems
Advanced protection features ensure reliable performance

Application

Powerful and efficient
Reliable performance
Versatile application

Specifications

Source Content uid	FDS8960C	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Reach Compliance Code	compliant
ECCN Code	EAR99	Additional Feature	FAST SWITCHING
Avalanche Energy Rating (Eas)	24.5 mJ	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	35 V	Drain Current-Max (ID)	7 A
Drain-source On Resistance-Max	0.024 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Power Dissipation-Max (Abs)	2 W
Pulsed Drain Current-Max (IDM)	20 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON