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See Technical Specifications

FDT458P +BOM

P-Channel 30 V 3.4A (Ta) 3W (Ta) Surface Mount SOT-223-4

Manufacturer:

onsemi
Mfr.Part #:

FDT458P
Datasheet:

FDT458P Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDT458P

FDT458P General Description

Designed specifically for use with synchronous or conventional switching PWM controllers, the FDT458P MOSFET is a game-changer in the realm of power management. Its superior performance characteristics, such as reduced R_DS(ON) specifications, set it apart from the competition, making it an ideal choice for demanding applications where efficiency is paramount

Key Features

Fast switching speed
Low power consumption
Small size, high density
SMT package for space efficiency
Easily integrated with other devices
Wide operating temperature range

Application

Customizable Settings
Stylish Design
Portable and Convenient

Specifications

Source Content uid	FDT458P	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	75 Weeks
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	3.4 A
Drain-source On Resistance-Max	0.13 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	1.1 W
Pulsed Drain Current-Max (IDM)	10 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON