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See Technical Specifications

FDV304P +BOM

P-Channel Digital FET -25V, -0.46A, 1.1Ω

Manufacturer:

onsemi
Mfr.Part #:

FDV304P
Datasheet:

FDV304P Datasheet (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Models:

Request Free CAD Models for FDV304P

FDV304P General Description

Featuring high performance characteristics and a wide operating temperature range, the FDV304P P-Channel transistor offers reliable operation in demanding environments. With its low ON resistance, fast switching times, and high power dissipation capability, this transistor is ideal for use in power management, voltage regulation, and other circuit applications where efficiency and precision are required

Key Features

This IC is designed to operate in harsh environments.
High reliability and long lifespan ensure a long operational life.
Low power consumption for reduced energy costs.

Application

A go-to product for everything.
Useful in so many ways.
Practical and efficient.

Specifications

Source Content uid	FDV304P	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.21.00.95
Factory Lead Time	43 Weeks	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	25 V	Drain Current-Max (ID)	0.46 A
Drain-source On Resistance-Max	1.1 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	10 pF	JEDEC-95 Code	TO-236
JESD-30 Code	R-PDSO-G3	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation Ambient-Max	0.35 W	Power Dissipation-Max (Abs)	0.35 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON