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FDY102PZ +BOM

P-Channel 20 V 830mA (Ta) 625mW (Ta) Surface Mount SC-89-3

FDY102PZ General Description

This Single P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the r DS(on)@VGS = –1.5 V.

Key Features

  • Max rDS(on) = 0.5 Ω at VGS = –4.5 V, ID = –0.83 A
  • Max rDS(on) = 0.7 Ω at VGS = –2.5 V, ID = –0.70 A
  • Max rDS(on) = 1.2 Ω at VGS = –1.8 V, ID = –0.43 A
  • Max rDS(on) = 1.8 Ω at VGS = –1.5 V, ID = –0.36 A
  • HBM ESD protection level = 1400 V (Note 3)
  • RoHS Compliant

Application

  • This product is general usage and suitable for many different applications.

Specifications

Source Content uid FDY102PZ Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 Factory Lead Time 68 Weeks
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.83 A Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 30 pF
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.625 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Element Material SILICON

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