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See Technical Specifications

FGA25N120ANTDTU +BOM

IGBT, 1200V, 25A, NPT Trench

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

FGA25N120ANTDTU
Datasheet:

FGA25N120ANTDTU Datasheet (PDF)
IGBT Type:

NPT and Trench
Voltage - Collector Emitter Breakdown (Max):

1200 V
Current - Collector (Ic) (Max):

50 A
Current - Collector Pulsed (Icm):

90 A
EDA/CAD Models:

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FGA25N120ANTDTU General Description

Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven

Key Features

NPT Trench Technology, Positive temperature coefficient
Low saturation voltage: V_CE(sat), typ = 2.0V@ I_C = 25A and T_C = 25°C
Low switching loss: E_OFF,typ = 0.96mJ@ I_C= 25A and T_C= 25°C
Extremely enhanced avalanche capability

Application

Consumer Appliances

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	NPT and Trench	Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A	Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.65V @ 15V, 50A	Power - Max	312 W
Switching Energy	4.1mJ (on), 960µJ (off)	Input Type	Standard
Gate Charge	200 nC	Td (on/off) @ 25°C	50ns/190ns
Test Condition	600V, 25A, 10Ohm, 15V	Reverse Recovery Time (trr)	350 ns
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	FGA25N120