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See Technical Specifications

FGB40N60SM +BOM

IGBT Transistors with a 600V Voltage Rating and 40A Current Capacity, featuring FIELD STOP PLANAR technology - GEN2

Manufacturer:

Onsemi
Mfr.Part #:

FGB40N60SM
Datasheet:

FGB40N60SM Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for FGB40N60SM

Email: [email protected]

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Tel: +852 95804164

FGB40N60SM General Description

The FGB40N60SM IGBT from ON Semiconductor represents a leap forward in power semiconductor technology. Utilizing innovative field stop technology, this second generation IGBT is tailor-made for welder and PFC applications that demand low conduction and switching losses. With its advanced features and superior performance, the FGB40N60SM is poised to revolutionize the power electronics industry

Key Features

Wide operating temperature
High surge current capability
Good thermal shock resistance
Robust against electrical stress
Low radio-frequency interference

Application

Automotive Parts
Agricultural Equipment
Construction Machinery

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	SMD/SMT	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	2.3 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	80 A
Pd - Power Dissipation	349 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	FGB40N60SM
Gate-Emitter Leakage Current	+/- 400 nA	Product Type	IGBT Transistors
Factory Pack Quantity	800	Subcategory	IGBTs
Unit Weight	0.046296 oz