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FGH30S150P +BOM
1500 volt, 30 amp IGBT with shorted-anode
TO-247-3-
Manufacturer:
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Mfr.Part #:
FGH30S150P
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Datasheet:
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Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.5 kV
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EDA/CAD Models:
Availability: 4324 PCS
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FGH30S150P General Description
With a focus on advanced field stop trench and shorted-anode technology, ON Semiconductor unveils the FGH30S150P, a shorted-anode trench IGBT engineered for optimal conduction and switching performance in soft switching scenarios. This device sets itself apart with its exceptional ability to operate in parallel configurations while maintaining superior avalanche capability. Specifically catered to applications in induction heating and microwave ovens, the FGH30S150P exemplifies ON Semiconductor's commitment to delivering innovative solutions that meet the evolving demands of the semiconductor industry
Key Features
- High Current Capability
- Fast Response Time
- Good Noise Reduction
- Low Power Consumption
Application
- Reliable power conversion
- Efficient energy storage
Specifications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.5 kV | Collector-Emitter Saturation Voltage | 2.15 V |
Maximum Gate Emitter Voltage | - 25 V, 25 V | Continuous Collector Current at 25 C | 60 A |
Pd - Power Dissipation | 500 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | FGH30S150P |
Continuous Collector Current Ic Max | 30 A | Gate-Emitter Leakage Current | +/- 500 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 450 |
Subcategory | IGBTs | Unit Weight | 0.225401 oz |
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FGH30S150P Datasheet PDF
FGH30S150P PDF Preview
In Stock: 4,324
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
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1+ | - | - |
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