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See Technical Specifications

FGH40T100SMD +BOM

High-Power Semiconducting Device for Industrial Applications

Manufacturer:

Onsemi
Mfr.Part #:

FGH40T100SMD
Datasheet:

FGH40T100SMD Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Collector- Emitter Voltage VCEO Max:

1 kV
Collector-Emitter Saturation Voltage:

2.3 V
EDA/CAD Models:

Request Free CAD Models for FGH40T100SMD

Email: [email protected]

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Tel: +852 95804164

FGH40T100SMD General Description

Discover the power of innovation with ON Semiconductor's FGH40T100SMD, a groundbreaking product incorporating field stop trench IGBT technology. This advanced series of IGBTs is engineered to deliver peak performance in hard switching applications, catering to the specific requirements of UPS, welding, and PFC systems. Designed for efficiency and reliability, the FGH40T100SMD promises to redefine the standards of power electronics, offering unparalleled capabilities for critical industrial applications

Key Features

Low noise emission
High sensitivity
Long lifespan
Real-time monitoring

Application

Advanced Technology
Cost-effective Solution
Flexible Configurations

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Collector- Emitter Voltage VCEO Max	1 kV
Collector-Emitter Saturation Voltage	2.3 V	Maximum Gate Emitter Voltage	- 20 V, + 20 V
Continuous Collector Current at 25 C	80 A	Pd - Power Dissipation	333 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Series	FGH40T100SMD	Gate-Emitter Leakage Current	500 nA
Product Type	IGBT Transistors	Factory Pack Quantity	450
Subcategory	IGBTs	Unit Weight	0.225401 oz