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See Technical Specifications

FGH40T120SQDNL4 +BOM

Transistor IGBT N-Channel 1200V 160A TO-247 Package

Manufacturer:

Onsemi
Mfr.Part #:

FGH40T120SQDNL4
Datasheet:

FGH40T120SQDNL4 Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Models:

Request Free CAD Models for FGH40T120SQDNL4

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FGH40T120SQDNL4 General Description

Product FGH40T120SQDNL4, an Insulated Gate Bipolar Transistor (IGBT), boasts a sturdy and cost-effective Ultra Field Stop Trench construction. This robust device excels in demanding switching applications, delivering superior performance with both low on-state voltage and minimal switching loss

Key Features

Robust Circuit Design and High-Speed Performance
Pb-Free, Eco-Friendly Manufacturing Process
Fast Switching and Low Forward Voltage Drop
Safe Operating Area and High Surge Current Handling
Low Capacitance and Low Inductance for Reduced Noise
High Temperature Operation up to 175°C with TJmax

Application

Energy storage system
Electric vehicle charging
Grid-tied solar system

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.2 kV	Collector-Emitter Saturation Voltage	1.78 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	160 A
Pd - Power Dissipation	454 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Series	FGH40T120SQDNL4
Gate-Emitter Leakage Current	200 nA	Product Type	IGBT Transistors
Factory Pack Quantity	450	Subcategory	IGBTs
Unit Weight	0.324351 oz