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The FGH75T65SHDTL4 is housed in a TO-247-4 package
TO-247-4Manufacturer:
Mfr.Part #:
FGH75T65SHDTL4
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
650 V
EDA/CAD Models:
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ON Semiconductor's new series of field stop 3rd generation IGBTs, exemplified by the FGH75T65SHDTL4, is setting a new standard for performance in the industry. By incorporating the latest advancements in IGBT technology, this product offers unmatched efficiency and precision in critical applications such as solar inverters, UPS systems, welders, telecommunications equipment, energy storage systems, and power factor correction units. With its low conduction and switching losses, the FGH75T65SHDTL4 is a game-changer for engineers and developers seeking to optimize the performance of their designs
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 650 V | Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 150 A |
Pd - Power Dissipation | 455 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | FGH75T65SHDTL4 |
Continuous Collector Current Ic Max | 150 A | Gate-Emitter Leakage Current | 400 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 450 |
Subcategory | IGBTs | Unit Weight | 0.221838 oz |
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