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See Technical Specifications

FGH75T65UPD +BOM

Transistor Insulated Gate Bipolar Transistor (IGBT) chip designed for high-power applications

Manufacturer:

Onsemi
Mfr.Part #:

FGH75T65UPD
Datasheet:

FGH75T65UPD Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for FGH75T65UPD

Email: [email protected]

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Tel: +852 95804164

FGH75T65UPD General Description

Leveraging cutting-edge field stop trench IGBT technology, ON Semiconductor has unveiled the FGH75T65UPD product, designed to deliver unparalleled performance in various applications such as solar inverters, UPS systems, welders, and digital power generators. With a focus on minimizing conduction and switching losses, this series of IGBTs caters to industries where efficiency and reliability are paramount

Key Features

Advanced thermal management
Precise control and regulation
Superior reliability guaranteed
Fully protected against overcurrent
High-speed operation ensured
Robust construction for heavy use

Application

Smart Home Devices
Wireless Headphones
Digital Camera Accessories

Specifications

Product Category	IGBT Transistors	REACH	Details
Technology	Si	Mounting Style	Through Hole
Configuration	Single	Collector- Emitter Voltage VCEO Max	650 V
Collector-Emitter Saturation Voltage	2.3 V	Maximum Gate Emitter Voltage	- 20 V, 20 V
Continuous Collector Current at 25 C	150 A	Pd - Power Dissipation	187 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Series	FGH75T65UPD	Gate-Emitter Leakage Current	400 nA
Product Type	IGBT Transistors	Factory Pack Quantity	450
Subcategory	IGBTs	Unit Weight	0.225401 oz