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See Technical Specifications

FGY40T120SMD +BOM

IGBT, 1200 V, 40 A Field Stop Trench

Manufacturer:

Onsemi
Mfr.Part #:

FGY40T120SMD
Datasheet:

FGY40T120SMD Datasheet (PDF)
REACH:

Details
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
EDA/CAD Models:

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FGY40T120SMD General Description

The FGY40T120SMD is engineered to meet the highest standards in power electronic devices, providing superior performance and durability. Its innovative design ensures optimal performance in challenging environments, making it a reliable solution for critical applications where efficiency and performance are crucial

Key Features

FS Trench Technology, Positive Temperature Coefficient
High Speed Switching
Low Saturation Voltage: V_CE(sat) =1.8 V @ I_C = 40 A
100% of the Parts tested for I_LM(1)
High Input Impedance
RoHS Compliant

Specifications

Product Category	IGBT Transistors	REACH	Details
Technology	Si	Mounting Style	Through Hole
Configuration	Single	Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	1.8 V	Maximum Gate Emitter Voltage	- 25 V, 25 V
Continuous Collector Current at 25 C	80 A	Pd - Power Dissipation	882 W
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Series	FGY40T120SMD	Continuous Collector Current Ic Max	40 A
Gate-Emitter Leakage Current	+/- 400 nA	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Unit Weight	0.269105 oz