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G3R20MT17N +BOM

100A-rated N-channel silicon carbide MOSFET housed in SOT227 package

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G3R20MT17N General Description

N-Channel 1700 V 100A (Tc) 523W (Tc) Chassis Mount SOT-227

Specifications

Series G3R™ FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 26mOhm @ 75A, 15V Vgs(th) (Max) @ Id 2.7V @ 15mA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 15 V Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 10187 pF @ 1000 V Power Dissipation (Max) 523W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount
Base Product Number G3R20

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