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G3R40MT12D +BOM

The G3R40MT12D is a Power Field-Effect Transistor tailored for high-performance applications

Manufacturer:

GeneSiC Semiconductor
Mfr.Part #:

G3R40MT12D
Datasheet:

G3R40MT12D Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for G3R40MT12D

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G3R40MT12D General Description

For applications requiring high voltage, high current power switching, the G3R40MT12D module offers a reliable and efficient solution. Its dual N-Channel MOSFET design, with a 400V drain-source voltage and 20A continuous drain current per channel, provides the necessary capacity for demanding industrial and automotive applications. The module's low on-resistance and compact TO-247 package simplify design and integration, while the built-in temperature sensing and overcurrent protection features ensure safe and reliable operation in challenging environments

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	63 A	Rds On - Drain-Source Resistance	40 mOhms
Vgs - Gate-Source Voltage	- 5 V, + 15 V	Vgs th - Gate-Source Threshold Voltage	2.7 V
Qg - Gate Charge	88 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	297 W
Channel Mode	Enhancement	Series	G3R
Configuration	Single	Fall Time	27 ns
Forward Transconductance - Min	16.1 S	Product	MOSFET
Product Type	MOSFET	Rise Time	22 ns
Factory Pack Quantity	30	Subcategory	MOSFETs
Transistor Type	MOSFET	Type	SiC MOSFET
Typical Turn-Off Delay Time	27 ns	Typical Turn-On Delay Time	44 ns
Unit Weight	0.211644 oz