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G3R45MT17D +BOM

N-Channel 1700 V 61A (Tc) 438W (Tc) Through Hole TO-247-3

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G3R45MT17D General Description

N-Channel 1700 V 61A (Tc) 438W (Tc) Through Hole TO-247-3

Specifications

Product Category MOSFET Technology SiC
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1.7 kV
Id - Continuous Drain Current 52 A Rds On - Drain-Source Resistance 45 mOhms
Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V
Qg - Gate Charge 106 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 364 W
Channel Mode Enhancement Series G3R
Configuration Single Fall Time 53 ns
Forward Transconductance - Min 17.1 S Product MOSFETs
Product Type MOSFET Rise Time 32 ns
Factory Pack Quantity 30 Subcategory MOSFETs
Transistor Type MOSFET Type SiC MOSFET
Typical Turn-Off Delay Time 31 ns Typical Turn-On Delay Time 70 ns
Unit Weight 0.211644 oz

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