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G3R75MT12J +BOM

200 volts and 75 milliohms resistance in TO-263-7 package

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G3R75MT12J General Description

N-Channel 1200 V 42A (Tc) 224W (Tc) Surface Mount TO-263-7

Specifications

Product Category MOSFET Technology SiC
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1.2 kV
Id - Continuous Drain Current 38 A Rds On - Drain-Source Resistance 75 mOhms
Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V
Qg - Gate Charge 47 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 196 W
Channel Mode Enhancement Series G3R
Configuration Single Fall Time 6 ns
Forward Transconductance - Min 9 S Product MOSFET
Product Type MOSFET Rise Time 12 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type MOSFET Type SiC MOSFET
Typical Turn-Off Delay Time 15 ns Typical Turn-On Delay Time 15 ns
Unit Weight 0.056438 oz

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