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GCMS080B120S1-E1 +BOM

Discrete Semiconductor Modules SiC 1200V 80mO MOSFET & 10A SBD SOT-227

GCMS080B120S1-E1 General Description

N-Channel 1200 V 30A (Tc) 142W (Tc) Chassis Mount SOT-227

Specifications

Product Category Discrete Semiconductor Modules Product Power MOSFET Modules
Type COPACK Power Module Technology SiC
Vf - Forward Voltage 1.5 V at 10 A Vr - Reverse Voltage 1.2 kV
Vgs - Gate-Source Voltage - 10 V, + 25 V Mounting Style Screw Mount
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Configuration Single Fall Time 14 ns
Id - Continuous Drain Current 30 A Pd - Power Dissipation 142 W
Product Type Discrete Semiconductor Modules Rds On - Drain-Source Resistance 77 mOhms
Rise Time 4 ns Factory Pack Quantity 10
Subcategory Discrete Semiconductor Modules Transistor Polarity N-Channel
Typical Turn-Off Delay Time 16 ns Typical Turn-On Delay Time 9 ns
Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs th - Gate-Source Threshold Voltage 2 V

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