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H5TQ1G63BFR-H9C +BOM

DDR DRAM, 64MX16, 20ns, CMOS

Key Features

  • VDD=VDDQ=1.5V +/- 0.075V
  • Fully differential clock inputs (CK, CK) operation
  • Differential Data Strobe (DQS, DQS)
  • On chip DLL align DQ, DQS and DQS transition with CK 
  • transition
  • DM masks write data-in at the both rising and falling 
  • edges of the data strobe
  • All addresses and control inputs except data, 
  • data strobes and data masks latched on the 
  • rising edges of the clock
  • Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13
  • and 14 supported
  • Programmable additive latency 0, CL-1, and CL-2 
  • supported
  • Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10
  • Programmable burst length 4/8 with both nibble 
  • sequential and interleave mode
  • BL switch on the fly
  • 8banks
  • Average Refresh Cycle (Tcase of0 oC~ 95oC)
  • - 7.8 µs at 0oC ~ 85 oC
  • - 3.9 µs at 85oC ~ 95 oC
  • JEDEC standard 78ball FBGA(x4/x8)
  • Driver strength selected by EMRS
  • Dynamic On Die Termination supported
  • Asynchronous RESET pin supported
  • ZQ calibration supported
  • TDQS (Termination Data Strobe) supported (x8 only)
  • Write Levelization supported
  • 8 bit pre-fetch
  • This product in compliance with the RoHS directive.

Specifications

Part Life Cycle Code Obsolete Pin Count 96
Reach Compliance Code ECCN Code EAR99
HTS Code 8542.32.00.32 Access Mode MULTI BANK PAGE BURST
Access Time-Max 20 ns Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 667 MHz I/O Type COMMON
Interleaved Burst Length 4,8 JESD-30 Code R-PBGA-B96
JESD-609 Code e1 Length 13 mm
Memory Density 1073741824 bit Memory IC Type DDR3 DRAM
Memory Width 16 Number of Functions 1
Number of Ports 1 Number of Terminals 96
Number of Words 67108864 words Number of Words Code 64000000
Operating Mode SYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min Organization 64MX16
Output Characteristics 3-STATE Peak Reflow Temperature (Cel) 260
Power Supplies 1.5 V Qualification Status Not Qualified
Refresh Cycles 8192 Seated Height-Max 1.2 mm
Self Refresh YES Sequential Burst Length 4,8
Standby Current-Max 0.01 A Supply Current-Max 0.26 mA
Supply Voltage-Max (Vsup) 1.575 V Supply Voltage-Min (Vsup) 1.425 V
Supply Voltage-Nom (Vsup) 1.5 V Surface Mount YES
Technology CMOS Temperature Grade OTHER
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Terminal Form BALL
Terminal Pitch 0.8 mm Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20 Width 7.5 mm

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