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This product is a DDR DRAM with a capacity of 128 megabits organized in a 16-bit configuration, featuring a fast speed of 0.225 nanoseconds
FBGA-96Manufacturer:
SK HYNIX INC
Mfr.Part #:
H5TQ2G63DFR-PBC
Datasheet:
Part Life Cycle Code:
Obsolete
Pin Count:
96
ECCN Code:
EAR99
HTS Code:
8542.32.00.36
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Part Life Cycle Code | Obsolete | Pin Count | 96 |
Reach Compliance Code | ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | Access Mode | MULTI BANK PAGE BURST |
Access Time-Max | 0.225 ns | Additional Feature | AUTO/SELF REFRESH |
Clock Frequency-Max (fCLK) | 800 MHz | I/O Type | COMMON |
Interleaved Burst Length | 4,8 | JESD-30 Code | R-PBGA-B96 |
Length | 13 mm | Memory Density | 2147483648 bit |
Memory IC Type | DDR3 DRAM | Memory Width | 16 |
Number of Functions | 1 | Number of Ports | 1 |
Number of Terminals | 96 | Number of Words | 134217728 words |
Number of Words Code | 128000000 | Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 85 °C | Operating Temperature-Min | |
Organization | 128MX16 | Output Characteristics | 3-STATE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Qualification Status | Not Qualified |
Refresh Cycles | 8192 | Seated Height-Max | 1.2 mm |
Self Refresh | YES | Sequential Burst Length | 4,8 |
Standby Current-Max | 0.012 A | Supply Current-Max | 0.235 mA |
Supply Voltage-Max (Vsup) | 1.575 V | Supply Voltage-Min (Vsup) | 1.425 V |
Supply Voltage-Nom (Vsup) | 1.5 V | Surface Mount | YES |
Technology | CMOS | Temperature Grade | OTHER |
Terminal Form | BALL | Terminal Pitch | 0.8 mm |
Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Width | 7.5 mm |
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