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Insulated Gate Bipolar Transistor
TO-247-3Manufacturer:
Mfr.Part #:
HGTG11N120CN
Datasheet:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 kV
EDA/CAD Models:
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The HGTG11N120CN sets a new standard for high voltage, high speed power IGBTs, offering exceptional performance and reliability. With its advanced trench gate technology, this IGBT delivers higher switching speeds and lower energy losses, while its TO-247 package allows for easy mounting and superior thermal performance. Whether it's motor control, inverters, or power supplies, the HGTG11N120CN is the perfect choice for demanding applications
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.1 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 43 A |
Pd - Power Dissipation | 298 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTG11N120CN |
Continuous Collector Current | 55 A | Continuous Collector Current Ic Max | 43 A |
Gate-Emitter Leakage Current | +/- 250 nA | Height | 20.82 mm |
Length | 15.87 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 150 | Subcategory | IGBTs |
Width | 4.82 mm | Part # Aliases | HGTG11N120CN_NL |
Unit Weight | 0.225401 oz |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $5.943 | $5.94 |
137+ | $2.373 | $325.10 |
548+ | $2.292 | $1,256.02 |
959+ | $2.253 | $2,160.63 |
The prices below are for reference only.
All bill of materials (BOM) can be sent via email to
[email protected],
or fill below form to Quote for HGTG11N120CN, guaranteed quotes back within
12hr.
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