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IGB20N60H3ATMA1 +BOM

IGBT Trench Field Stop 600 V 40 A 170 W Surface Mount PG-TO263-3

IGB20N60H3ATMA1 General Description

IGBT Trench Field Stop 600 V 40 A 170 W Surface Mount PG-TO263-3

Infineon Technologies Corporation Inventory

Key Features

  • Low switching losses for high efficiency
  • Excellent V
  • ce(sat)
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability 5μs
  • Offering T
  • j(max)
  • Packaged with and without freewheeling diode for increased design freedom
  • Low switching and conduction losses
  • Very good EMI behavior
  • Can be used with a small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 600 V IGBT efficiency and EMI behavior
Infineon Technologies Corporation Original Stock

Application

  • Industrial heating and welding
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series TrenchStop®
IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 40 A Current - Collector Pulsed (Icm) 80 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A Power - Max 170 W
Switching Energy 690µJ Input Type Standard
Gate Charge 120 nC Td (on/off) @ 25°C 16ns/194ns
Test Condition 400V, 20A, 14.6Ohm, 15V Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Base Product Number IGB20N60
RHoS yes PBFree yes
HalogenFree yes Product Category IGBT Transistors
Technology Si Maximum Gate Emitter Voltage - 20 V, 20 V
Product Type IGBT Transistors Subcategory IGBTs
Tradename TRENCHSTOP Part # Aliases IGB20N60H3 SP000852232

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IGB20N60H3ATMA1 Datasheet PDF

Preliminary Specification IGB20N60H3ATMA1 PDF Download

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