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IGU04N60TAKMA1 +BOM

IGBT Trench 600 V 8 A 42 W Through Hole PG-TO251-3

IGU04N60TAKMA1 General Description

IGBT Trench 600 V 8 A 42 W Through Hole PG-TO251-3

Infineon Technologies Corporation Inventory

Key Features

  • Lowest V
  • CEsat
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V
  • CEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
Infineon Technologies Corporation Original Stock

Application

  • Home appliances
  • Industrial heating and welding
  • Motor control and drives
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series TrenchStop™
IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 8 A Current - Collector Pulsed (Icm) 12 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 4A Power - Max 42 W
Switching Energy 61µJ (on), 84µJ (off) Input Type Standard
Gate Charge 27 nC Td (on/off) @ 25°C 14ns/164ns
Test Condition 400V, 4A, 47Ohm, 15V Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole Base Product Number IGU04N60
RHoS yes PBFree yes
HalogenFree yes Product Category IGBT Transistors
Technology Si Maximum Gate Emitter Voltage - 20 V, 20 V
Product Type IGBT Transistors Subcategory IGBTs
Tradename TRENCHSTOP Part # Aliases IGU04N60T SP001045846

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IGU04N60TAKMA1 Datasheet PDF

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In Stock: 6,120

Minimum Order: 1

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