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IGP30N60H3XKSA1 +BOM

IGBT Trench Field Stop 600 V 60 A 187 W Through Hole PG-TO220-3-1

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IGP30N60H3XKSA1 General Description

IGBT Trench Field Stop 600 V 60 A 187 W Through Hole PG-TO220-3-1

Infineon Technologies Corporation Inventory

Key Features

  • Low switching losses for high efficiency
  • Excellent V
  • ce(sat)
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability 5μs
  • Offering T
  • j(max)
  • Packaged with and without freewheeling diode for increased design freedom
  • Low switching and conduction losses
  • Very good EMI behavior
  • Can be used with a small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 600 V IGBT efficiency and EMI behavior
Infineon Technologies Corporation Original Stock

Application

Power Management, Alternative Energy

Specifications

RHoS yes PBFree yes
HalogenFree yes Product Category IGBT Transistors
Technology Si Maximum Gate Emitter Voltage - 20 V, 20 V
Series HighSpeed 3 Product Type IGBT Transistors
Subcategory IGBTs Tradename TRENCHSTOP
Part # Aliases IGP30N60H3 SP000702546

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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IGP30N60H3XKSA1 Datasheet PDF

Preliminary Specification IGP30N60H3XKSA1 PDF Download

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