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IGW40T120FKSA1 +BOM

IGBT Transistors INDUSTRY 14

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IGW40T120FKSA1 General Description

IGBT NPT, Trench Field Stop 1200 V 75 A 270 W Through Hole PG-TO247-3-1

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Key Features

  • Lowest V
  • CEsat
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V
  • CEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
Infineon Technologies Corporation Original Stock

Application

Power Management, Alternative Energy, Motor Drive & Control, Consumer Electronics, Maintenance & Repair

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series TrenchStop®
IGBT Type NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 75 A Current - Collector Pulsed (Icm) 105 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A Power - Max 270 W
Switching Energy 6.5mJ Input Type Standard
Gate Charge 203 nC Td (on/off) @ 25°C 48ns/480ns
Test Condition 600V, 40A, 15Ohm, 15V Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole Base Product Number IGW40T120
RHoS yes PBFree yes

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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IGW40T120FKSA1 Datasheet PDF

Preliminary Specification IGW40T120FKSA1 PDF Download

IGW40T120FKSA1 PDF Preview

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