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IKA08N65F5XKSA1 +BOM

IGBT 650 V 10.8 A 31.2 W Through Hole PG-TO220-3

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IKA08N65F5XKSA1 General Description

IGBT 650 V 10.8 A 31.2 W Through Hole PG-TO220-3

Infineon Technologies Corporation Inventory

Key Features

  • 650 V breakthrough voltage
  • Compared to best-in-class HighSpeed 3 family
  • Factor 2.5 lower Q
  • g
  • Factor 2 reduction in switching losses
  • 200mV reduction in V
  • CEsat
  • Co-packed with Rapid Si-diode technology
  • Low C
  • OES
  • OSS
  • Mild positive temperature coefficient V
  • CEsat
  • Temperature stability of V
  • f
  • Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
  • 50 V increase in the bus voltage possible without compromising reliability
  • Higher power density design
Infineon Technologies Corporation Original Stock

Application

  • Industrial heating and welding
  • Solutions for photovoltaic energy systems
  • Uninterruptible Power Supplies (UPS)

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series TrenchStop®
IGBT Type - Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 10.8 A Current - Collector Pulsed (Icm) 24 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A Power - Max 31.2 W
Switching Energy 70µJ (on), 20µJ (off) Input Type Standard
Gate Charge 22 nC Td (on/off) @ 25°C 10ns/116ns
Test Condition 400V, 4A, 48Ohm, 15V Reverse Recovery Time (trr) 41 ns
Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole
Base Product Number IKA08N65 RHoS yes
PBFree yes HalogenFree yes

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IKA08N65F5XKSA1 Datasheet PDF

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