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IKW40N60H3FKSA1 +BOM

IGBT Trench Field Stop 600 V 80 A 306 W Through Hole PG-TO247-3-1

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IKW40N60H3FKSA1 General Description

IGBT Trench Field Stop 600 V 80 A 306 W Through Hole PG-TO247-3-1

Infineon Technologies Corporation Inventory

Key Features

  • Low switching losses for high efficiency
  • Excellent V
  • ce(sat)
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
  • Short circuit capability 5μs
  • Offering T
  • j(max)
  • Packaged with and without freewheeling diode for increased design freedom
  • Low switching and conduction losses
  • Very good EMI behavior
  • Can be used with a small gate resistor for reduced delay time and voltage overshoot
  • High current density
  • Best-in-class 600 V IGBT efficiency and EMI behavior
Infineon Technologies Corporation Original Stock

Application

  • Uninterruptible Power Supplies (UPS)
  • Industrial Heating and Welding
  • Solutions for Solar Energy Systems

Specifications

RHoS yes PBFree yes
Product Category IGBT Transistors Technology Si
Maximum Gate Emitter Voltage - 20 V, 20 V Series HighSpeed 3
Product Type IGBT Transistors Subcategory IGBTs
Tradename TRENCHSTOP Part # Aliases IKW40N60H3 SP000769928

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