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IKW15N120BH6XKSA1 +BOM

IGBT Trench Field Stop 1200 V 30 A 200 W Through Hole PG-TO247-3-41

email Email: [email protected]
skype Skype: live:.cid.ab6b29428937b76
tel Tel: +852 95804164

IKW15N120BH6XKSA1 General Description

IGBT Trench Field Stop 1200 V 30 A 200 W Through Hole PG-TO247-3-41

Infineon Technologies Corporation Inventory

Key Features

  • High efficiency in hard switching and resonant topologies
  • Easy paralleling capability due to positive temperature coefficient in V
  • CEsat
  • Low EMI
  • Low Gate Charge Q
  • G
  • Very soft, fast recovery anti-parallel diode
  • High ruggedness, temperature stable behavior
  • Very tight parameter distribution
  • Lowest losses on IGBT, high system efficiency for higher power output
  • Fast and easy replacement of predecessor H3 technology
  • High device reliability and lifetime expectancy
Infineon Technologies Corporation Original Stock

Application

  • Energy Storage Systems
  • Industrial heating and welding
  • Uninterruptible Power Supplies (UPS)

Specifications

RHoS yes PBFree yes
HalogenFree yes

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Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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IKW15N120BH6XKSA1 Datasheet PDF

Preliminary Specification IKW15N120BH6XKSA1 PDF Download

IKW15N120BH6XKSA1 PDF Preview

In Stock: 4,510

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