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IKA08N65H5XKSA1 +BOM

IGBT 650 V 10.8 A 31.2 W Through Hole PG-TO220-3-111

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IGBT 650 V 10.8 A 31.2 W Through Hole PG-TO220-3-111

650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Q
g
Factor 2 reduction in switching losses
200mV reduction in V
CEsat
Co-packed with Rapid Si-diode technology
Low C
OES
OSS
Mild positive temperature coefficient V
CEsat
Temperature stability of V
f
best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50 V increase in the bus voltage possible without compromising reliability
Higher power density design

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop®
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	10.8 A	Current - Collector Pulsed (Icm)	24 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 8A	Power - Max	31.2 W
Switching Energy	70µJ (on), 30µJ (off)	Input Type	Standard
Gate Charge	22 nC	Td (on/off) @ 25°C	11ns/115ns
Test Condition	400V, 4A, 48Ohm, 15V	Reverse Recovery Time (trr)	40 ns
Operating Temperature	-40°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IKA08N65	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	650 V	Collector-Emitter Saturation Voltage	1.65 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	10.8 A
Pd - Power Dissipation	31.2 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Gate-Emitter Leakage Current	100 nA
Product Type	IGBT Transistors	Factory Pack Quantity	500
Subcategory	IGBTs	Tradename	TRENCHSTOP
Part # Aliases	IKA08N65H5 SP001001722	Unit Weight	0.211644 oz