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IRF3717TRPBF +BOM

Infineon IRF3717TRPBF N-channel MOSFET

IRF3717TRPBF General Description

N-Channel 20 V 20A (Ta) 2.5W (Ta) Surface Mount 8-SO

Application

SWITCHING

Specifications

FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 10 V
FET Feature - Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Product Category MOSFET Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 20 A
Rds On - Drain-Source Resistance 4.4 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.45 V Qg - Gate Charge 33 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 2.5 W Channel Mode Enhancement
Configuration Single Fall Time 6 ns
Forward Transconductance - Min 57 S Height 1.75 mm
Length 4.9 mm Product Type MOSFET
Rise Time 14 ns Factory Pack Quantity 4000
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 3.9 mm Unit Weight 0.019048 oz

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