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IRF530 +BOM

High-power N-channel MOSFET transistor suitable for DC motor control and power amplifier applications

IRF530 General Description

N-Channel 100 V 14A (Tc) 88W (Tc) Through Hole TO-220AB

Specifications

Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 14 A Rds On - Drain-Source Resistance 160 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 79 W
Channel Mode Enhancement Series IRF530
Configuration Single Fall Time 25 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 35 ns
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 12 ns
Width 4.7 mm Unit Weight 0.068784 oz

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