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Compact surface mount design for space-constrained devic
DirectFET™ Isometric STManufacturer:
Infineon Technologies
Mfr.Part #:
IRF6626
Datasheet:
Series:
HEXFET®
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
30 V
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Avaq Semiconductor offers the highly versatile and reliable IRF6626 driver, produced by Infineon Technologies. With its multifunctional and high-performance capabilities, this component is an excellent choice for a wide range of electronic projects.
To ensure that you have all the necessary information to make the most of this component, Avaq provides a free datasheet PDF, as well as circuit diagrams, pin layouts, pin details, pin voltage ratings, and equivalent components for the IRF6626.
Avaq also offers free samples. Simply fill out and submit the sample request form to receive your free samples for testing. If you have any questions, please feel free to contact us at any time.
Series | HEXFET® | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 16A (Ta), 72A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.4mOhm @ 16A, 10V | Vgs(th) (Max) @ Id | 2.35V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2380 pF @ 15 V | Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
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