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See Technical Specifications

IRF7313PBF +BOM

2W power dissipation with a low ON-resistance of 29mΩ at 5.8A and 10V

Manufacturer:

Infineon
Mfr.Part #:

IRF7313PBF
Datasheet:

IRF7313PBF Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Models:

Request Free CAD Models for IRF7313PBF

IRF7313PBF General Description

The IRF7313PBF is a dual N and P-channel power MOSFET featuring a low on-resistance and high drain-source voltage, making it suitable for high-speed switching applications. Its SO-8 package type ensures efficient heat dissipation, making it ideal for use in power management circuits, motor control, and DC-DC converters where space and power efficiency are critical. With a continuous drain current of 3.6 amps for the N-channel and 2.9 amps for the P-channel, this dual MOSFET is designed to deliver high performance and reliability

Key Features

Low noise operation
Efficient power conversion
Silicon dioxide passivation
Rohs compliant packaging

Application

Robotics applications
Industrial automation
Battery management

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	6.5 A	Rds On - Drain-Source Resistance	46 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Qg - Gate Charge	22 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2 W	Channel Mode	Enhancement
Configuration	Dual	Fall Time	17 ns
Height	1.75 mm	Length	4.9 mm
Product Type	MOSFET	Rise Time	8.9 ns
Factory Pack Quantity	3800	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Type	Power MOSFET
Typical Turn-Off Delay Time	26 ns	Typical Turn-On Delay Time	8.1 ns
Width	3.9 mm	Part # Aliases	SP001566122
Unit Weight	0.019048 oz