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IRF7389 +BOM

Product IRF7389 is a Power Field-Effect Transistor with a 7

Manufacturer:

Infineon
Mfr.Part #:

IRF7389
Datasheet:

IRF7389 Datasheet (PDF)
Tj Max:

150.0 °C
Moisture Sensitivity Level:

1
Polarity:

N+P
Ptot Max:

2.5 W
EDA/CAD Models:

Request Free CAD Models for IRF7389

IRF7389 General Description

Engineered for high-speed switching applications, the IRF7389 MOSFET power transistor features a typical gate charge of 100nC and a low gate threshold voltage of 2V, providing compatibility with a wide range of gate drive circuits. Additionally, the transistor's high avalanche energy rating of 410mJ ensures robustness in high-energy transient conditions. Whether it's for power supplies, motor drives, or other high-power switching applications, the IRF7389 delivers the performance and reliability needed for demanding environments

Key Features

High-efficiency power conversion
Low-power consumption
Compact design
Suitable for automotive applications

Application

Power supply usage
Motors and batteries
Lighting control

Specifications

Tj max	150.0 °C	Moisture Sensitivity Level	1
Polarity	N+P	Ptot max	2.5 W
RthJA max	50.0 K/W	VDS max	-30.0 V
VGS max	20.0 V	RDS (on) max	98.0 mΩ
VGS(th) min	1.0 V	ID max	-5.3 A